晶体种类: | 半导体,拓扑材料,红外半导体材料, |
纯度: | 5N , 6N |
禁带宽度: | 0.55eV |
生长方式: | CVT 化学气相传输法 |
更多信息: | 请咨询:sales@6carbon.com |
参考文献:
1,Mirabelli, Gioele, et al. "Air sensitivity of MoS2, MoSe2, MoTe2, HfS2, and HfSe2." Journal of Applied Physics 120.12 (2016): 125102.
2,Mleczko, Michal J., et al. "HfSe2 and ZrSe2: Two-dimensional semiconductors with native high-κ oxides." Science advances 3.8 (2017): e1700481.
3,Yin, Lei, et al. "Ultrafast and ultrasensitive phototransistors based on few-layered HfSe2." Applied Physics Letters 109.21 (2016): 213105.




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