GeS 晶体
材料名称 Name | GeS |
性质分类 Electrical properties | 拓扑材料,红外材料
|
禁带宽度 Bangap | 1.2 eV |
合成方法 Synthetic method | CVT |
晶体结构 Crystal Structure |
|
剥离难易程度 Degree of difficulty for exfoliation | 容易 |
更多信息: | 请咨询:sales@6carbon.com |
参考文献
1, Madatov, R., A. Alekperov, and O. Hasanov. "Effect of Nd Impurity on Photoconductivity and Optical Absorption Spectra of GeS Single Crystal." Journal of Applied Spectroscopy 84.1 (2017).
2,Madatov, R., A. Alekperov, and O. Hasanov. "Effect of Nd Impurity on Photoconductivity and Optical Absorption Spectra of GeS Single Crystal." Journal of Applied Spectroscopy 84.1 (2017).
3,Zhang, Shengli, et al. "Two-dimensional GeS with tunable electronic properties via external electric field and strain." Nanotechnology 27.27 (2016): 274001.



