超高纯GeS2 , 1g 装。
GeS2 晶体
材料名称 Name |
GeS2
|
性质分类 Electrical properties |
紫外材料,铁磁性材料,拓扑材料
|
禁带宽度 Bangap | 3.8 eV |
合成方法 Synthetic method | CVT |
剥离难易程度 Degree of difficulty for exfoliation |
易 Easy |
保存注意事项 Notice | 晶体稳定 |
更多信息: | 请咨询:sales@6carbon.com |
参考文献:
Sung, Geon-Kyu, Ki-Joon Jeon, and Cheol-Min Park. "Highly reversible and superior Li-storage characteristics of layered GeS2 and its amorphous composites." ACS applied materials & interfaces 8.43 (2016): 29543-29550.、
Lin, Changgui, et al. "Second-harmonic generation in IR-transparent β-GeS 2 crystallized glasses." Optics letters 34.4 (2009): 437-439.
Durandurdu, Murat. "High-density amorphous phase of GeS 2 glass under pressure." Physical Review B 79.20 (2009): 205202.


